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SFH 507
IR-Empfanger fur Fernbedienungen (fur kurze Burst) IR-Receiver for Remote Control Systems (for Short Burst)
31.1 30.1 16.3 15.9 12.9 12.1 Surface not flat
SFH 507
10.3 9.7
VS
1.5 9.7 8.7 GND
2.54 3x2.54 = 7.62
V OUT
0.50
3.85 4.45
0.4
0.8 max.
1.7 1.1
R 2.75
0.65 0.50
4.3 3.7
GEX06910
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Empfangermodul fur Ubertragungsprotokolle mit kurzen Pulspaketen (N 6 Pulse pro Bit) q Fotodiode mit integriertem Verstarker q Gehause schwarz eingefarbt: Vergu optimiert fur eine Wellenlange von 950 nm q Hohe Storsicherheit q Geringe Stromaufnahme (0.5 mA typ.) q 5 V Betriebsspannung q Hohe Empfindlichkeit q TTL und CMOS kompatibel q Mogliche Datenubertragungsrate 2.4 kbit/s (N = 6, f0 = 56 kHz) Anwendungen q Empfanger fur IR-Fernsteuerungen Typ Type Tragerfrequ. Carrier Frequency kHz 30 33 36 Bestellnr. Ordering Code
Features q Receiver module for transmission codes with short bursts (N 6 pulses per bit) q Photodiode with hybride integrated circuit q Black epoxy resin: daylight filter optimized for 950 nm q High immunity against ambient light q Low power consumption (0.5 mA typ.) q 5 V supply voltage q High sensitivity (internal shield case) q TTL and CMOS compatibility q 2.4 kbit/s data transmission possible (N = 6, f0 = 56 kHz) Applications q IR-remote control preamplifier module Typ Type Tragerfrequ. Carrier Frequency kHz 38 40 56 Bestellnr. Ordering Code
SFH 507-30 SFH 507-33 SFH 507-36
Q62702-P1701 Q62702-P1702 Q62702-P1703
SFH 507-38 SFH 507-40 SFH 507-56 1
Q62702-P1704 Q62702-P1705 Q62702-P1822 05.97
Semiconductor Group
fex06841
6.1 5.5
SFH 507
2 Input Control Circuit 100 k PIN AGC Bandpass Demodulator 1 3
VS
OUT
GND
OHF02198
Blockschaltbild Block Diagram Grenzwerte (TA = 25C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operation and storage temperature range Sperrschichttemperatur Junction temperature range Lottemperatur Lotstelle 1 mm vom Gehause; Lotzeit t 10 s Soldering temperature soldering joint 1 mm distance from package, soldering time t 10 s Betriebsspannung Supply voltage Betriebsstrom Supply current Ausgangsspannung Output voltage Ausgangsstrom Output current Verlustleistung Total power dissipation TA 85 C Pin 2 Pin 2 Pin 3 Pin 3 Symbol Symbol Wert Value - 25 ... + 85 100 260 Einheit Unit C C C
TA, Tstg Tj TS
VS ICC VOUT IOUT Ptot
- 0.3 ... + 6.0 5 - 0.3 ... + 6.0 5 50
V mA V mA mW
Semiconductor Group
2
SFH 507
Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Betriebsspannung Supply voltage Bestrahlungsstarke (Testsignal, s. Figure 2) Threshold irradiance (test signal, see Fig. 2) Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Halbwinkel Half angle Stromaufnahme Current consumption Vs = 5 V, Ev = 0 Vs = 5 V, Ev = 40 kIx, sunlight Ausgangsspannung Output voltage IOUT = 0.5 mA, Ee = 0.7 mW/m2 (Testsignal, s. Figure 2) (test signal, see Fig. 2)
1) 1)
Symbol Symbol
Wert Value typ. 5.0 (4.5 ... 5.5)
Einheit Unit V
VS Ee min(30-40 kHz)1) Ee min(56 kHZ)1) Ee max1)
s max Pin 2
typ. 0.4 (< 0.6) mW/m2 typ. 0.45 (< 0.7) mW/m2 30 W/m2 950 45 nm deg.
ICC ICC
Pin 3
0.5 (< 0.8) 1.0 250
mA mA mV
VOUT low
In Verbindung mit einer typ. SFH 415 bei Betrieb mit IF = 0.5 A wird eine Reichweite von ca. 35 m erreicht. Together with an IRED SFH 415 under operation conditions of IF = 0.5 A a distance of 35 m is possible.
Semiconductor Group
3
SFH 507
330 2
*)
+5V 4.7 F
*)
SFH 506/507
>10 k optional
3
C
1
*)
GND
OHF02197
only necessary to suppress power supply disturbances
Figure 1 Externe Beschaltung External circuit
Ee
t pi
*)
t
T
*)
_ N < 6 Pulses is recommended for optimal function
VO
VOH
VOL
t d 1)
1) 2)
t po2)
t
4/f o < t d < 10/ f o
OHF00220
t pi - 3/f o < t po < t pi + 6/f o
Figure 2 Optisches Testsignal (IR-Diode SFH 415, IF = 0.5 A, N = 6 pulses, f = f0, T = 10 ms) Optical test signal
Semiconductor Group
4
SFH 507
Sensitivity vs. electric field disturbance Ee min = f (E), field strength of disturbance, f = f0
1.0 mW/m E e min
2 OHF00217
Vertical directivity y
Sensitivity vs. bright ambient Ee min = f (E)
10
OHF00246
-10
0
1.6 1.4 1.2
10 2 mW/m
2
OHF00215
-20
f (E) = f 0
20
E e min
0.8
Correlation with ambient light sources _ (disturbance effect) : 10 W/m 2 ~ 1.4 klx _ (stand. illum. A, T= 2855 K) ~ 8.2 klx (daylight, T = 5900 K)
10 1
0.6
-30
1.0 0.8
30
0.4
-40
f (E) = 10 kHz
0.6 0.4 0.2
40 50 60 70 80 90 0.6
Ambient, = 950 nm 10 -1 -2 10 10 -1 10 0 10 1 W/m 2 10 2 E 10 0
-50 -60 -70 -80 -90 -0.6
0.2
0
0
0.4
0.8
1.2
kV/m
2.0
-0.4
-0.2
0
0.2
0.4
E
Relative luminous sensitivity Srel = f (), TA = 25 oC
1.0
OHF02193
Horizontal directivity x
-10
Sensitivity vs. supply volt. disturbances, Ee min = f (VS RMS)
10
OHF00247
0
1.6 1.4 1.2
10 1 mW/m E e min
2
OHF00214
-20
S rel
0.8
20
f =f0
10 kHz
1 kHz
0.6
-30
1.0 0.8
30
10 0
0.4
-40 -50
0.6 0.4 0.2
40 50 60 70 80 90 0.6
100 Hz
0.2
-60 -70 -80 -90 -0.6
0.0 800 850 900 950 1000 1050 nm 1150
-0.4
-0.2
0
0.2
0.4
10 -1 -2 10
10 -1
10 0
10 1
10 2 mV 10 3 V s RMS
Output pulse Ton, Toff = f(Ee)
1.0 ms
OHF00245
Relative sensitivity Ee min/Ee = f (f / f0) f = f0 5 %, f (3 dB) = f0/7
1.0
OHF00219
Sensitivity vs. dark ambient Tp out = f (Ee)
300
OHF00216
Ton, Toff
0.8
E e min / E e
0.8
s T p out 250
Ton
200
0.6
0.6
Input burst duration
Toff
0.4 = 950 nm 0.2
0.2 0.4
150
100 = 950 nm
50
0.0 -1 10
10 0
10 1
10 2
mW/m 2 10 4 Ee
0 0.7
0.8
0.9
1.0
1.1
1.2 1.3 f /f0
0 -1 10
10 0
10 1
10 2
mW/m 2 Ee
10 4
Semiconductor Group
5
SFH 507
Sensitivity vs. duty cycle Ee = f (tp / T)
3.0 mW/m2 E e min 2.5
OHL00218
2.0
N =6
1.5
N = 16
N = 32
0.1
0.5
0.0 0.0
0.2
0.4
0.6
0.8
t p /T
Semiconductor Group
6

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